Capacitance-voltage studies on enhancement-mode InGaAs metal-oxide-semiconductor field-effect transistor using atomic-layer-deposited Al2O3 gate dielectric

Content Provider	Semantic Scholar
Author	Xuan, Yi Lin, Han Chung Ye, Peide D. Wilk, Glen David
Copyright Year	2006
Abstract	Atomic layer deposition (ALD) Al2O3 is a high-quality gate dielectric on III-V compound semiconductor with low defect density, low gate leakage, and high thermal stability. The high-quality of Al2O3∕InGaAs interface surviving from high temperature annealing is verified by excellent capacitance-voltage (CV) curves showing sharp transition from depletion to accumulation with “zero” hysteresis, 1% frequency dispersion per decade at accumulation capacitance, and strong inversion at split CV measurement. An enhancement-mode n-channel InGaAs metal-oxide-semiconductor field-effect-transistor is also demonstrated by forming true inversion channel at Al2O3∕InGaAs interface.
Starting Page	263518
Ending Page	263518
Page Count	1
File Format	PDF HTM / HTML
DOI	10.1063/1.2217258
Volume Number	88
Alternate Webpage(s)	https://engineering.purdue.edu/~yep/Papers/Capacitance-voltage%20studies%20on%20enhancement-mode%20InGaAs.pdf
Alternate Webpage(s)	http://docs.lib.purdue.edu/cgi/viewcontent.cgi?article=1039&context=nanopub
Alternate Webpage(s)	https://doi.org/10.1063/1.2217258
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article