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Deposition Apparatus and Method of Depositing Thin Filmusing the Same Cross-reference
| Content Provider | Semantic Scholar |
|---|---|
| Author | Meister, Lexyoume Ip |
| Copyright Year | 2017 |
| Abstract | (57) ABSTRACT A deposition apparatus and a method of depositing a thin film using the same are provided. By maintaining pressure of an external chamber between a reaction space and an outer wall slightly lower than pressure of the reaction space by Supply ing a charge gas to an external chamber of a space between the reaction space and an outer wall, parasitic plasma can be prevented from being generated within the external chamber. When loading or unloading a substrate, a charge gas of the external chamber can be prevented from flowing backward to the reaction space, and by Supplying nitrogen gas as a charge gas, even if high plasma power is Supplied, parasitic plasma can be effectively prevented from being generated in the external chamber. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://patentimages.storage.googleapis.com/3c/de/52/6402ce42d63bbd/US9085825.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
