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METHOD FOR FABRICATING ASIC FILM AND A METHOD FOR FABRICATING ASIC MULTI-LAYERED FILM STRUCTURE BACKGROUND OF THE INVENTION 1. Field of the Invention
| Content Provider | Semantic Scholar |
|---|---|
| Copyright Year | 2017 |
| Abstract | An organic Silicon gas having Si-H bond and Si-C bond is Supplied onto a Si-contained base material, to form a SiC film on a main Surface of the base material. Moreover, An organic Silicon gas having Si-H bond and Si-C bond is Supplied onto a Si-contained base material, to form a SiC underfilm. Then, a SiC film is formed on the SiC underfilm to fabricate a SiC multi-layered film structure. 18 Claims, 5 Drawing Sheets |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://patentimages.storage.googleapis.com/01/be/8a/83a75a61beb4e2/US6566279.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |