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PROBE HAVING FIELD EFFECT TRANSISTOR CHANNEL AND METHOD OF FABRICATING THE SAME BACKGROUND OF THE INVENTION 1. Field of the Invention
| Content Provider | Semantic Scholar |
|---|---|
| Copyright Year | 2017 |
| Abstract | A probe of a Scanning probe microscope (SPM) having a 21) Appl. No.: 09/851,411 (21) Appl. No.: 09/851, field-effect transistor (FET) structure at the tip of the probe, (22) Filed: May 8, 2001 and a method of fabricating the probe are provided. The O O SPM prove having a source, channel and drain is formed by (65) Prior Publication Data etching a single crystalline Silicon Substrate into a V-shaped US 2002/0008304 A1 Jan. 24, 2002 groove and doping the etching sloping Sides at one end of the V-shaped groove with impurities. (51) Int. Cl. .............................................. H01L 27/148 ped g p (52) U.S. Cl. ........................................ 257/255; 250/310 4 Claims, 8 Drawing Sheets |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://patentimages.storage.googleapis.com/e1/a0/b9/9996f5e262e31a/US6521921.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
