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Investigation on mechanism for instability under drain current stress in amorphous Si-In-Zn-O thin-film transistors
| Content Provider | Semantic Scholar |
|---|---|
| Author | Kim, Do Hyung Jung, Hyun Kwang Yang, Woochul Kim, Dae Hwan Lee, Sang Yeol |
| Copyright Year | 2013 |
| Abstract | Abstract The mechanism for instability against positive bias stress (PBS) in amorphous Si–In–Zn–O (SIZO) thin-film transistors has been investigated by analyzing the subgap density of states (DOSs), which was extracted from multi-frequency method using direct capacitance–voltage measurements. It was found that DOSs including shallow tail states and deep trap states are constant in density as PBS time increases. It indicates that the bulk traps in the SIZO channel layer and the channel/dielectric interfacial traps are not created during the PBS duration. Therefore, the instability against PBS in SIZO thin-film transistors is attributed to the charge trapping by the acceptor-like DOSs. |
| Starting Page | 314 |
| Ending Page | 317 |
| Page Count | 4 |
| File Format | PDF HTM / HTML |
| DOI | 10.1016/j.tsf.2012.12.017 |
| Volume Number | 527 |
| Alternate Webpage(s) | http://silk.kookmin.ac.kr/img_up/shop_pds/kmusilk/contents/myboard/Investigationonmechanismforinstability1.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
