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Prediction of enhanced ferromagnetism in (Ga,Mn)As by intrinsic defect manipulation
| Content Provider | Semantic Scholar |
|---|---|
| Author | Sanvito, Stefano Hill, Nicola A. |
| Copyright Year | 2002 |
| Abstract | Abstract In the diluted magnetic semiconductor (Ga,Mn)As the excess of As incorporated as As antisites (As Ga ) is responsible for the hole compensation. The As Ga defect can be transformed into a As interstitial–Ga vacancy pair (As i –V Ga ) upon illumination. In this paper we study the effects of such a transition on the ferromagnetism of (Ga,Mn)As using density functional theory within the local spin density approximation. We find that the ferromagnetic order in (Ga,Mn)As is strongly enhanced if As Ga are transformed into As i –V Ga pairs, since the hole compensation is reduced. This suggests a valuable way to tune the carrier concentration and hence the T c in (Ga,Mn)As, without changing the Mn concentration nor the microscopic configuration of the Mn ions. |
| Starting Page | 252 |
| Ending Page | 257 |
| Page Count | 6 |
| File Format | PDF HTM / HTML |
| DOI | 10.1016/S0304-8853(01)00925-8 |
| Volume Number | 238 |
| Alternate Webpage(s) | https://www.tcd.ie/Physics/people/Stefano.Sanvito/PAPER/PAPER_PDF/JMMM-238-252-02.pdf |
| Alternate Webpage(s) | https://doi.org/10.1016/S0304-8853%2801%2900925-8 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
