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Double resonance mechanism of ferromagnetism and magnetotransport in (Ga-Mn)As
| Content Provider | Semantic Scholar |
|---|---|
| Author | Inoue Nonoyama Itoh |
| Copyright Year | 2000 |
| Abstract | We calculate the electronic states of the Mn-doped semiconductors and show that resonant states are formed at the top of the down spin valence band due to magnetic impurities and that they give rise to a strong and long-ranged ferromagnetic coupling between Mn moments. We propose that the coupling of the resonant states, in addition to the intra-atomic exchange interaction between the resonant and nonbonding states, is the origin of the ferromagnetism of (Ga-Mn)As. The mechanism is thus called "double resonance." The resonant states bring about the spin-dependent resistivity to produce magnetoresistive properties in (Ga-Mn)As and their junctions. |
| File Format | PDF HTM / HTML |
| PubMed reference number | 11082608 |
| Journal | Medline |
| Volume Number | 85 |
| Issue Number | 21 |
| Alternate Webpage(s) | http://ir.nul.nagoya-u.ac.jp/jspui/bitstream/2237/7126/1/p4610_1.pdf |
| Alternate Webpage(s) | https://doi.org/10.1103/PhysRevLett.85.4610 |
| Journal | Physical review letters |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |