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Ferromagnetism and Electronic Structure of (Ga,Mn)As:Bi and (Ga,Mn)As Epitaxial Layers
| Content Provider | Semantic Scholar |
|---|---|
| Author | Yastrubchak, O. B. Sadowski, Janusz Andrearczyk, T. Domagala, Jaroslaw Z. Gluba, Ł. Rawski, Michał Żuk, Jerzy Wosinski, Tadeusz |
| Copyright Year | 2013 |
| Abstract | The photoreflectance (PR) spectroscopy was applied to study the band-structure in GaAs:Bi, (Ga,Mn)As and (Ga,Mn)As:Bi layers with the 4% of Mn and 1 % of Bi content and, as a reference, undoped GaAs layer. All films were grown by low temperature (LT) MBE on semi-insulating (001) GaAs substrates. Photoreflec-tance studies were supported by Raman spectroscopy and high resolution X-ray diffractometry (XRD) measurements. Magnetic properties of the films were characterized with a superconducting quantum in-terference device (SQUID) magnetometer. Our findings were interpreted in terms of the model, which as-sumes that the mobile holes residing in the valence band of GaAs and the Fermi level position determined by the concentration of valence-band holes. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://nap.sumdu.edu.ua/index.php/nap/nap2013/paper/download/942/360 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |