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ZnO p–n Homojunction Random Laser Diode Based on Nitrogen‐Doped p‐type Nanowires
| Content Provider | Semantic Scholar |
|---|---|
| Author | Huang, Jian Chu, Sheng Kong, Jieying Zhang, Long Schwarz, Casey M. Wang, Guoping Chernyak, Leonid Chen, Zhanghai Liu, Jianlin |
| Copyright Year | 2013 |
| Abstract | An electrically pumped ZnO homojunction random laser diode based on nitrogen-doped p-type ZnO nanowires is reported. Nitrogen-doped ZnO nanowires are grown on a ZnO thin film on a silicon substrate by chemical vapor deposition without using any metal catalyst. The p-type behavior is studied by output characteristics and transfer characteristic of the nanowire back-gated field-effect transistor, as well as low-temperature photoluminescence. The formation of the p–n junction is confirmed by the current–voltage characteristic and electron beam-induced current. The nanowire/thin-film p–n junction acts as random laser diode. The random lasing behavior is demonstrated by using both optical pumping and electrical pumping, with thresholds of 300 kW/cm2 and 40 mA, respectively. The angle-dependant electroluminescence of the device further proves the random lasing mechanism. An output power of 70 nW is measured at a drive current of 70 mA. |
| Starting Page | 179 |
| Ending Page | 185 |
| Page Count | 7 |
| File Format | PDF HTM / HTML |
| DOI | 10.1002/adom.201200062 |
| Alternate Webpage(s) | http://qsl.ece.ucr.edu/Publications/Journals/jno155.pdf |
| Alternate Webpage(s) | http://qsl.ee.ucr.edu/Publications/Journals/jno155.pdf |
| Alternate Webpage(s) | https://doi.org/10.1002/adom.201200062 |
| Volume Number | 1 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
