ZnO nanowires array p-n homojunction and its application as a visible-blind ultraviolet photodetector

Content Provider	Semantic Scholar
Author	Leung, Y. H. Connie He, Zhubing Luo, Linbao Tsang, Chi Him Alpha Wong, Ning-Bew Zhang, Wenjun Lee, Shuit-Tong
Copyright Year	2010
Abstract	We demonstrated a simple and low-cost fabrication of ZnO p-n homojunction. The junction consists of n-type ZnO nanowires array by a hydrothermal method covered with p-type Al, N co-doped ZnO film by a sol-gel method. The junction exhibits good rectification characteristics, with reverse leakage current and rectification ratio of ∼5 μA and ∼150 at bias of 3 V, respectively. The junction is operated as a photodetector when light radiation is shined on the glass-side of the device. The photodetector shows a peak responsivity at 384 nm with UV-visible responsivity ratio (R384 nm/R550 nm) of ∼70 at an operating bias of −3 V.
Starting Page	053102
Ending Page	053102
Page Count	1
File Format	PDF HTM / HTML
DOI	10.1063/1.3299269
Alternate Webpage(s)	http://chglib.icp.ac.ru/subjex/2012/pdf09/AplPhysLet-2010-96(5)053102.pdf
Alternate Webpage(s)	https://doi.org/10.1063/1.3299269
Volume Number	96
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article