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Sb-doped p-ZnO∕Ga-doped n-ZnO homojunction ultraviolet light emitting diodes
| Content Provider | Semantic Scholar |
|---|---|
| Author | Chu, Sheng Lim, Jae-Hong Mandalapu, L. J. Yang, Zheng Liu, Jianlin |
| Copyright Year | 2008 |
| Abstract | ZnO p-n homojunction light emitting diodes were fabricated based on p-type Sb-doped ZnO∕n-type Ga-doped ZnO thin films. Low resistivity Au∕NiO and Au∕Ti contacts were formed on top of p-type and n-type ZnO layers, respectively. Au∕NiO contacts on p-type ZnO exhibited a low specific resistivity of 7.4×10−4Ωcm2. The light emitting diodes yielded strong near-band-edge emissions in temperature-dependent and injection current-dependent electroluminescence measurements. |
| Starting Page | 152103 |
| Ending Page | 152103 |
| Page Count | 1 |
| File Format | PDF HTM / HTML |
| DOI | 10.1063/1.2908968 |
| Alternate Webpage(s) | https://qsl.ece.ucr.edu/Publications/Journals/jno102.pdf |
| Alternate Webpage(s) | http://qsl.ece.ucr.edu/Publications/Journals/jno102.pdf |
| Alternate Webpage(s) | http://www1.ece.uic.edu/~zyang/Publications/Downloads/Papers/J0034-ZhengYang.pdf |
| Alternate Webpage(s) | https://doi.org/10.1063/1.2908968 |
| Volume Number | 92 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |