NDLI: Study of Silicon Dioxide Nanowires Grown via Rapid Thermal Annealing of Sputtered Amorphous Carbon Films Doped with Si

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Study of Silicon Dioxide Nanowires Grown via Rapid Thermal Annealing of Sputtered Amorphous Carbon Films Doped with Si

Content Provider	Semantic Scholar
Author	Li, Feng Zhang, Sam Kong, Jun Zhang, Winnie
Copyright Year	2011
Abstract	Silica nanowires are usually synthesized by means of vapor liquid solid method with metal catalyst introduced at the top which will unambiguously affect the excellent light emission properties of silica nanowires in optoelectronic devices an optical sign l sensors. In this study, silicon dioxide nanowires without traces of catal st are grown via rapid thermal annealing of magnetron sputtered amorphous carbon film doped with silicon. These high density silicon dioxide nanowires were amorphous with a length longer than 20 m and a diameter of 30–140 nm. Detailed morphology and microstructure analysis are conducted with field emission scanning electron microscopy and high resolution transmission electron microscopy. Graphitization of carbon and oxidation of silicon during rapid thermal annealing were revealed by Raman and X-ray photoelectron spectroscopy. This study indicates that high growth rate of >6 m/min of high purity silicon dioxide nanowire is possible simply by sputtering followed by rapid thermal annealing and an additional heating treatment.
Starting Page	240
Ending Page	245
Page Count	6
File Format	PDF HTM / HTML
DOI	10.1166/nnl.2011.1163
Volume Number	3
Alternate Webpage(s)	http://www3.ntu.edu.sg/ThinFilms/mae-thinfilms/Thinfilms/pdfpapers/fengjinnl1.pdf
Alternate Webpage(s)	https://doi.org/10.1166/nnl.2011.1163
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article

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