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2 μm wavelength range InP-based type-II quantum well photodiodes heterogeneously integrated on silicon photonic integrated circuits.
| Content Provider | Semantic Scholar |
|---|---|
| Author | Wang, Ruijun Sprengel, Stephan Muneeb, Muhammad Böhm, Gerhard Baets, Roel Amann, Markus-Christian Roelkens, Gunther |
| Copyright Year | 2015 |
| Abstract | The heterogeneous integration of InP-based type-II quantum well photodiodes on silicon photonic integrated circuits for the 2 µm wavelength range is presented. A responsivity of 1.2 A/W at a wavelength of 2.32 µm and 0.6 A/W at 2.4 µm wavelength is demonstrated. The photodiodes have a dark current of 12 nA at -0.5 V at room temperature. The absorbing active region of the integrated photodiodes consists of six periods of a "W"-shaped quantum well, also allowing for laser integration on the same platform. |
| File Format | PDF HTM / HTML |
| DOI | 10.1364/OE.23.026834 |
| Alternate Webpage(s) | http://www.photonics.intec.ugent.be/download/pub_3625.pdf |
| Alternate Webpage(s) | https://biblio.ugent.be/publication/7065213/file/7065224.pdf |
| PubMed reference number | 26480194 |
| Alternate Webpage(s) | https://doi.org/10.1364/OE.23.026834 |
| Journal | Medline |
| Volume Number | 23 |
| Issue Number | 20 |
| Journal | Optics express |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |