NDLI: Heterogeneously integrated InP-based type-II DFB laser array on silicon

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Heterogeneously integrated InP-based type-II DFB laser array on silicon

Content Provider	Semantic Scholar
Author	Wang, Ruijun Sprengel, Stephan Boehm, Gerhard Baets, Roel Amann, Markus-Christian Roelkens, Günther
Copyright Year	2017
Abstract	Introduction The spectral range of 2-3 μm is of interest for spectroscopic sensing applications as many important gases have strong absorption lines in this wavelength range. Silicon photonics opens new possibilities to realize compact spectroscopic gas sensors in the 23 μm wavelength range. For this purpose, different active photonic devices operated in this wavelength range are heterogeneously integrated on silicon to complete the components required for on-chip spectroscopic systems [1]. Recently, 2.3 μm range heterogeneously integrated III-V-on-silicon distributed feedback (DFB) lasers using InP-based type-II quantum wells were demonstrated [2]. The heterogeneous InP-based type-II DFB lasers can provide ~2 nm tunability and have been proven to be suitable for tunable diode laser absorption spectroscopy (TDLAS) of carbon monoxide gas. The integration of 2 μm range multi-wavelength DFB laser arrays on a silicon chip enables the simultaneous detection of several gas species with a single III-V-on-silicon sensor. In this paper, a heterogeneous III-V-on-silicon DFB laser array covering a wavelength range from 2.28 μm to 2.43 μm is presented.
Starting Page	1
Ending Page	2
Page Count	2
File Format	PDF HTM / HTML
Alternate Webpage(s)	https://biblio.ugent.be/publication/8539476/file/8539481.pdf
Alternate Webpage(s)	http://photonics.intec.ugent.be/download/pub_3912.pdf
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article

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