NDLI: Heterogeneously integrated III–V-on-silicon 2.3x μm distributed feedback lasers based on a type-II active region

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Heterogeneously integrated III–V-on-silicon 2.3x μm distributed feedback lasers based on a type-II active region

Content Provider	Semantic Scholar
Author	Wang, Ruijun Sprengel, Stephan Malik, Aditya Vasiliev, Anton Böhm, Gerhard Baets, Roel Amann, Markus-Christian Roelkens, Günther
Copyright Year	2016
Abstract	We report on 2.3x μm wavelength InP-based type-II distributed feedback (DFB) lasers heterogeneously integrated on a silicon photonics integrated circuit. In the devices, a III–V epitaxial layer stack with a “W”-shaped InGaAs/GaAsSb multi-quantum-well active region is adhesively bonded to the first-order silicon DFB gratings. Single mode laser emission coupled to a single mode silicon waveguide with a side mode suppression ratio of 40 dB is obtained. In continuous-wave regime, the 2.32 μm laser operates close to room temperature (above 15 °C) and emits more than 1 mW output power with a threshold current density of 1.8 kA/cm2 at 5 °C. A tunable diode laser absorption measurement of CO is demonstrated using this source.
Starting Page	221111
Ending Page	221111
Page Count	1
File Format	PDF HTM / HTML
DOI	10.1063/1.4971350
Volume Number	109
Alternate Webpage(s)	https://biblio.ugent.be/publication/8500072/file/8500073.pdf
Alternate Webpage(s)	http://photonics.intec.ugent.be/download/pub_3832.pdf
Alternate Webpage(s)	https://doi.org/10.1063/1.4971350
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article

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