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Effect of oxidation temperature on physical and electrical properties of ZrO 2 thin-film gate oxide on Ge substrate
| Content Provider | Semantic Scholar |
|---|---|
| Author | Lei, Zhen Goh, Kian Heng Abidin, Nor Ishida Zainal Wong, Yew Hoong |
| Copyright Year | 2017 |
| Abstract | Abstract The effects of oxidation temperatures on metal-oxide-semiconductor characteristics of sputtered zirconium thin films on germanium systematically investigated in an oxygen ambient. The samples were oxidized for 15 min at temperatures varying between 300 °C and 800 °C. The sample oxidized at 500 °C has demonstrated the highest electrical breakdown field of 16.6 MV cm − 1 . The crystallinity of the film was evaluated by X-ray diffraction, Fourier-transform infrared, Raman, and X-ray photoelectron spectroscopy analyses were also performed. The crystallite size and microstrain of the films were estimated by Williamson-Hall plot analysis. Optical microscopy was used to examine the sample surfaces and high-resolution transmission electron microscopy was carried out to investigate the cross-sectional structure. GeO 2 was detected in samples oxidized at temperature above 600 °C. A possible thermal oxidation mechanism related to the diffusion of oxygen through the ZrO 2 layer and formation of germanium dioxide has been proposed and discussed. |
| Starting Page | 352 |
| Ending Page | 358 |
| Page Count | 7 |
| File Format | PDF HTM / HTML |
| DOI | 10.1016/j.tsf.2017.10.008 |
| Alternate Webpage(s) | https://umexpert.um.edu.my/file/publication/00012735_154381_65863.pdf |
| Alternate Webpage(s) | https://doi.org/10.1016/j.tsf.2017.10.008 |
| Volume Number | 642 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
