NDLI: Effect of Oxidation Temperature on Physical and Electrical Properties of Sm$_{2}$O$_{3}$ Thin-Film Gate Oxide on Si Substrate

Content Provider	Springer Nature Link
Author	Goh, Kian Heng Haseeb, A. S. M. A. Wong, Yew Hoong
Copyright Year	2016
Abstract	Thermal oxidation of 150-nm sputtered pure samarium metal film on silicon substrate has been carried out in oxygen ambient at various temperatures (600°C to 900°C) for 15 min and the effect of the oxidation temperature on the structural, chemical, and electrical properties of the resulting Sm$_{2}$O$_{3}$ layers investigated. The crystallinity of the Sm$_{2}$O$_{3}$ films and the existence of an interfacial layer were evaluated by x-ray diffraction (XRD) analysis, Fourier-transform infrared (FTIR) spectroscopy, and Raman analysis. The crystallite size and microstrain of Sm$_{2}$O$_{3}$ were estimated by Williamson–Hall (W–H) plot analysis, with comparison of the former with the crystallite size of Sm$_{2}$O$_{3}$ as calculated using the Scherrer equation. High-resolution transmission electron microscopy (HRTEM) with energy-dispersive x-ray (EDX) spectroscopy analysis was carried out to investigate the cross-sectional morphology and chemical distribution of selected regions. The activation energy or growth rate of each stacked layer was calculated from Arrhenius plots. The surface roughness and topography of the Sm$_{2}$O$_{3}$ layers were examined by atomic force microscopy (AFM) analysis. A physical model based on semipolycrystalline nature of the interfacial layer is suggested and explained. Results supporting such a model were obtained by FTIR, XRD, Raman, EDX, and HRTEM analyses. Electrical characterization revealed that oxidation temperature at 700°C yielded the highest breakdown voltage, lowest leakage current density, and highest barrier height value.
Starting Page	5302
Ending Page	5312
Page Count	11
File Format	PDF
ISSN	03615235
Journal	Journal of Electronic Materials
Volume Number	45
Issue Number	10
e-ISSN	1543186X
Language	English
Publisher	Springer US
Publisher Date	2016-06-22
Publisher Place	New York
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Samarium oxide oxidation sputtering stoichiometry Optical and Electronic Materials Characterization and Evaluation of Materials Electronics and Microelectronics, Instrumentation Solid State Physics
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

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