NDLI: Zinc Selenide-Based Schottky Barrier Detectors for Ultraviolet-A and Ultraviolet-B Detection

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Zinc Selenide-Based Schottky Barrier Detectors for Ultraviolet-A and Ultraviolet-B Detection

Content Provider	Semantic Scholar
Author	Naval, V. Smith, Carl Ryzhikov, Vladislav Naydenov, Sergei V. Alves, Fábio Karunasiri, G.
Copyright Year	2010
Abstract	Wide-bandgap semiconductors such as zinc selenide (ZnSe) have become popular for ultraviolet (UV) photodetectors due to their broad UV spectral response. Schottky barrier detectors made of ZnSe in particular have been shown to have both low dark current and high responsivity. This paper presents the results of electrical and optical characterization of UV sensors based on ZnSe/Ni Schottky diodes fabricated using single-crystal ZnSe substrate with integrated UV-A (320–400 nm) and UV-B (280–320 nm) filters. For comparison, characteristics characterization of an unfiltered detector is also included. The measured photoresponse showed good discrimination between the two spectral bands. The measured responsivities of the UV-A and UV-B detectors were 50 mA/W and 10 mA/W, respectively. A detector without a UV filter showed a maximum responsivity of about 110 mA/W at 375 nm wavelength. The speed of the unfiltered detector was found to be about 300 kHz primarily limited by the RC time constant determined largely by the detector area.
File Format	PDF HTM / HTML
Alternate Webpage(s)	http://downloads.hindawi.com/journals/aoe/2010/619571.pdf
Alternate Webpage(s)	http://www.dtic.mil/dtic/tr/fulltext/u2/a533678.pdf
Language	English
Access Restriction	Open
Subject Keyword	Bands Dark current (physics) Detectors Diode Device Component Kilohertz Largest RC time constant Schottky barrier Semiconductor Semiconductors Spectrophotometry, Ultraviolet Ultraviolet Therapy nickel replication compartment sensor (device) wavelength zinc pyrithione 10 MG/ML Medicated Shampoo zinc selenide
Content Type	Text
Resource Type	Article

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