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Why does wurtzite form in nanowires of III-V zinc blende semiconductors?
| Content Provider | Semantic Scholar |
|---|---|
| Author | Glas, Frank Harmand, Jean-Christophe Patriarche, Gilles |
| Copyright Year | 2007 |
| Abstract | We develop a nucleation-based model to explain the formation of the wurtzite phase during the catalyzed growth of freestanding nanowires of zinc blende semiconductors. We show that in vapor-liquid-solid nanowire growth, nucleation generally occurs preferentially at the triple phase line. This entails major differences between zinc blende and wurtzite nuclei. Depending on the pertinent interface energies, wurtzite nucleation is favored at high liquid supersaturation. This explains our systematic observation of zinc blende during early growth of gold-catalyzed GaAs nanowires. |
| Starting Page | 146101 |
| Ending Page | 146101 |
| Page Count | 1 |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://arxiv.org/pdf/0706.0846.pdf |
| PubMed reference number | 17930689v1 |
| Volume Number | 99 |
| Issue Number | 14 |
| Journal | Physical review letters |
| Language | English |
| Access Restriction | Open |
| Subject Keyword | Energy, Physics Interface Device Component Nanowires Semiconductors gallium arsenide vapor zinc pyrithione 10 MG/ML Medicated Shampoo |
| Content Type | Text |
| Resource Type | Article |
