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Demonstration of an erbium-doped microsphere laser on a silicon chip
| Content Provider | Semantic Scholar |
|---|---|
| Author | Fan, Huibo Hua, Shiyue Jiang, Xiaoshun Xiao, Min |
| Copyright Year | 2013 |
| Abstract | We demonstrate a low-threshold microsphere laser on a silicon chip, fabricated from erbium-doped silica sol–gel film. Single-longitudinal mode lasing emission is observed from a 37 μm diameter microsphere cavity with an erbium ion concentration of 2× 1019 cm−3. The measured lasing threshold of the silica microsphere laser is as low as 4.8 μW. (Some figures may appear in colour only in the online journal) |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://optics.nju.edu.cn/upload/20130911/201309111435273710.pdf |
| Language | English |
| Access Restriction | Open |
| Subject Keyword | Body cavities Diameter (qualifier value) Doping (semiconductor) Erbium Integrated circuit Iontophoresis Microspheres Optical amplifier Silicic Acid Silicon Dioxide Sol-gel |
| Content Type | Text |
| Resource Type | Article |