NDLI: Erbium-doped silicon nanocrystals in silicon / silicon nitride superlattice structures : Light emission and energy transfer

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Erbium-doped silicon nanocrystals in silicon / silicon nitride superlattice structures : Light emission and energy transfer

Content Provider	Semantic Scholar
Author	Warga, Joe Basu, Souraseni Negro, Luca Dal
Copyright Year	2009
Abstract	In this paper, we discuss optical emission, energy transfer and electroluminescence from a superlattice structure containing small ( 2 nm diameter) amorphous silicon (Si) clusters coupled to erbium (Er) ions. The superlattice structure is fabricated by direct co-sputtering of thin ( 3–5 nm) Er-doped siliconrich nitride/Si (Er:SRN/Si) layers subsequently annealed at different temperatures in order to induce the nucleation of Si clusters and to activate Er emission. In this paper, we discuss efficient Er emission and sensitization with nanosecond-fast non-radiative transfer time and we report on low turn-on voltage ( 7 V) electroluminescence from simple electrical device structures. Our results demonstrate that small Si clusters embedded in silicon nitride-based superlattice structures provide a viable approach for the fabrication of Si-compatible optical devices. & 2008 Elsevier B.V. All rights reserved.
File Format	PDF HTM / HTML
Alternate Webpage(s)	http://nanoscience.bu.edu/papers/DalNegro-Erbium-doped%20silicon%20nanocrystals...-missing.pdf
Alternate Webpage(s)	http://ultra.bu.edu/papers/DalNegro-Erbium-doped%20silicon%20nanocrystals...-missing.pdf
Language	English
Access Restriction	Open
Subject Keyword	Activation action Diameter (qualifier value) Doping (semiconductor) Embedded system Embedding Energy Transfer Erbium Ions Nanocrystalline Materials Optical amplifier Recurrent neural network Sensitization (observable entity) Silicon:SCnt:Pt:Tiss:Qn Tomography, Emission-Computed, Single-Photon anatomical layer gallium nitride nanosecond silicon nitride voltage
Content Type	Text
Resource Type	Article

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