NDLI: Recombination dynamics in ultraviolet light-emitting diodes with Si-doped Al x Ga 1−x N/Al y Ga 1−y N multiple quantum well active regions

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Recombination dynamics in ultraviolet light-emitting diodes with Si-doped Al x Ga 1−x N/Al y Ga 1−y N multiple quantum well active regions

Content Provider	Semantic Scholar
Author	Chen, Kaixuan Mont, Frank Wilhelm Kim, Jong Kyu Schubert, E. Fred Li, Xuguang Smart, Joseph A.
Copyright Year	2006
Abstract	Ultraviolet UV light-emitting diodes with AlxGa1−xN/AlyGa1−yN multiple quantum well active regions, doped in the barriers with different Si doping levels, show a sharp near-band edge emission line UV luminescence . Some samples have a broad subband gap emission band centered at about 500 nm green luminescence in addition to the near-band edge emission. The electroluminescence intensities of the UV and green emission line are studied as a function of the injection current. For the sample grown on the AlN substrate under optimized growth conditions, the UV luminescence intensity increases linearly with the injection current, following a power law with an exponent of 1.0, while the green luminescence intensity increases sublinearly with the injection current. On the contrary, the samples grown on the sapphire substrate show a superlinear to the power of 2.0 and linear to the power of 1.0 dependence on the injection current for the UV and green luminescence, respectively. A theoretical model is proposed to explain the relationship between the luminescence intensities and the injection current. The results obtained from the model are in excellent agreement with the experimental results. The model provides a method to evaluate the dominant recombination process by measuring the exponent of the power-law dependence. © 2007 American Institute of Physics. DOI: 10.1063/1.2736312
File Format	PDF HTM / HTML
DOI	10.1557/PROC-0955-I07-07
Volume Number	955
Alternate Webpage(s)	https://www.ecse.rpi.edu/~schubert/Reprints/2007-Chen-KX-et-al-(JAP)-Recombination-dynamics-in-UV-LEDs-with-Si-doped-AlGaN-AlGaN-MQW-active-region.pdf
Alternate Webpage(s)	https://doi.org/10.1557/PROC-0955-I07-07
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article

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