NDLI: Effect of InGaN/GaN multiple quantum wells with p-n quantum barriers on efficiency droop in blue light-emitting diodes

Content Provider	IEEE Xplore Digital Library
Author	Sheng-Wen Wang Da-Wei Lin Chia-Yu Lee Che-Yu Liu Yu-Pin Lan Hao-Chung Kuo Shing-Chung Wang
Copyright Year	2013
Description	Author affiliation: Dept. of Photonics & Inst. of Electro-Opt. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan (Sheng-Wen Wang; Da-Wei Lin; Chia-Yu Lee; Che-Yu Liu; Yu-Pin Lan; Hao-Chung Kuo; Shing-Chung Wang)
Abstract	In this study, the structures of InGaN/GaN multiple quantum wells (MQWs) with p-n quantum barriers in various positions were proposed to investigate the efficiency droop behavior for blue light-emitting diodes (LEDs). The simulated electric field diagrams showed that the quantum well (QW) sandwiched by the p-n quantum barriers had a less electric field than the other QWs due to the original polarization-related electric field was partially balanced off by the built-in electric field of the p-n quantum barriers. In addition, the simulation results demonstrated that by selecting suitable position of p-n quantum barriers, the distribution of carriers could be effectively improved; hence the droop behavior could also be suppressed.
Starting Page	1
Ending Page	2
File Size	660669
Page Count	2
File Format	PDF
ISBN	9781557529732
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-06-09
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	The Optical Society
Subject Keyword	Radiative recombination Charge carrier processes Light emitting diodes Electric fields Current density Gallium nitride Quantum well devices
Content Type	Text
Resource Type	Article

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