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Combined strain and composition-induced effects in the metal-insulator transition of epitaxial VO 2 films
| Content Provider | Semantic Scholar |
|---|---|
| Author | Théry, Virginie Boulle, Alexandre Crunteanu, Aurelian Orlianges, Jean-Christophe |
| Copyright Year | 2017 |
| Abstract | The role of epitaxial strain, thermal strain, and bulk (strain-free) lattice parameters in the metal-insulator transition (MIT) and the structural phase transition (SPT) of VO2 is investigated for the case of epitaxial films grown on (001)-oriented TiO2 substrates. Temperature-resolved X-ray reciprocal space mapping has been used to determine the absolute state of strain as well as the bulk lattice parameters of VO2 at 100 °C. For the thinnest film (15 nm), the state of strain is dominated by the film/substrate lattice mismatch yielding an in-plane tensile strain which, in turn, shifts both the MIT and the SPT towards lower temperatures. Conversely, for the thickest film (100 nm), the epitaxial strain is relaxed, so that the state of strain is dominated by the VO2/TiO2 thermal expansion mismatch which is responsible for a compressive in-plane strain. In all cases, a swelling of the strain-free VO2 unit-cell is observed which indicates the presence of interfacial oxygen vacancies and/or Ti diffusion into t... |
| Starting Page | 251902 |
| Ending Page | 251902 |
| Page Count | 1 |
| File Format | PDF HTM / HTML |
| DOI | 10.1063/1.5010147 |
| Volume Number | 111 |
| Alternate Webpage(s) | https://hal.archives-ouvertes.fr/hal-02193086/document |
| Alternate Webpage(s) | https://doi.org/10.1063/1.5010147 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
