NDLI: Tuning the metal-insulator transition in epitaxial SrVO3 films by uniaxial strain

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Tuning the metal-insulator transition in epitaxial SrVO3 films by uniaxial strain

Content Provider	Semantic Scholar
Author	Wang, Changan Zhang, Hong-Bin Deepak, Kumar Chen, Chao Fouchet, Arnaud Duan, Juanmei Hilliard, Donovan Kentsch, Ulrich Chen, Deyang Zeng, Min Gao, Xingsen Zeng, Yujia Helm, Manfred Burkhard Prellier, Wilfrid Zhou, Shengqiang
Copyright Year	2019
Abstract	Understanding of the metal-insulator transition (MIT) in correlated transition-metal oxides is a fascinating topic in condensed matter physics and a precise control of such transitions plays a key role in developing novel electronic devices. Here we report an effective tuning of the MIT in epitaxial SrVO3 (SVO) films by expanding the out-of-plane lattice constant without changing in-plane lattice parameters, through helium ion irradiation. Upon increase of the ion fluence, we observe a MIT with a crossover from metallic to insulating state in SVO films. A combination of transport and magnetoresistance measurements in SVO at low temperatures reveals that the observed MIT is mainly ascribed to electron-electron interactions rather than disorder-induced localization. Moreover, these results are well supported by the combination of density functional theory and dynamical mean field theory (DFT+DMFT) calculations, further confirming the decrease of the bandwidth and the enhanced electron-electron interactions resulting from the expansion of out-of-plane lattice constant. These findings provide new insights into the understanding of MIT in correlated oxides and perspectives for the design of unexpected functional devices based on strongly correlated electrons.
File Format	PDF HTM / HTML
DOI	10.1103/PhysRevMaterials.3.115001
Alternate Webpage(s)	https://arxiv.org/pdf/1904.06629v1.pdf
Alternate Webpage(s)	https://export.arxiv.org/pdf/1904.06629
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article

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