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Growth control of metal-insulator transition and oxygen stoichiometry in VO 2 – x epitaxial thin films
| Content Provider | Semantic Scholar |
|---|---|
| Author | Lee, Seung-Beck Meyer, Tricia Lynn Lee, Ho Nyung |
| Copyright Year | 2015 |
| Abstract | Metal-insulator transition (MIT) in strongly correlated electron oxides (CEOs) is one of the most fascinating research topics in condensed matter physics, but is still far from fully understood. 1–3 Among CEOs, VO2 has attracted great attention since it undergoes the MIT near room temperature (~340 K). Due to the multivalent nature of vanadium oxides, 4–12 i.e. V2 O3, V O2, and V2 O5, the oxidation state and oxygen stoichiometry play an important role for determining the structural and electronic properties. For example, Jeong et al. recently demonstrated suppression of the MIT in VO2 by electric field-induced oxygen vacancies. 13 In addition, due to the lack of a good understanding on growth control of the oxidation state, stabilization of phase pure vanadium oxides with a single oxidation state is extremely challenging. Therefore, precise control of the chemical valence or oxidation state of vanadium in vanadium oxide thin films is highly desirable for not only fundamental research, but also technological applications |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://www.ferro2015.ornl.gov/pdfs/Lee_S%20P.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
