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A Comparative Passivation Study for InAs/GaSb Pin Superlattice Photodetectors
| Content Provider | Semantic Scholar |
|---|---|
| Author | Salihoglu, Omer Muti, Abdullah Aydınlı, Atilla |
| Copyright Year | 2013 |
| Abstract | In the quest to find ever better passivation techniques for infrared photodetectors, we explore several passivation layers using atomic layer deposition (ALD). We compare the impact of these layers on detectors fabricated under same conditions. We use ALD deposited Al2O3, HfO2, TiO2, ZnO, plasma enhanced chemical vapor deposition deposited SiO2, Si3N4, and sulfur containing octadecanethiol self assembled monolayer passivation layers on InAs/GaSb p-i-n superlattice diodes with an average cutoff wavelength of 5.1 μm. Passivated and unpassivated photodetectors compared for their electrical performances. |
| Starting Page | 661 |
| Ending Page | 666 |
| Page Count | 6 |
| File Format | PDF HTM / HTML |
| DOI | 10.1109/JQE.2013.2267553 |
| Volume Number | 49 |
| Alternate Webpage(s) | http://repository.bilkent.edu.tr/bitstream/handle/11693/11654/10.1109-JQE.2013.2267553.pdf?isAllowed=y&sequence=1 |
| Alternate Webpage(s) | https://doi.org/10.1109/JQE.2013.2267553 |
| Journal | IEEE Journal of Quantum Electronics |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
