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Atomic layer deposited Al2O3 passivation of type II InAs/GaSb superlattice photodetectors
| Content Provider | Semantic Scholar |
|---|---|
| Author | Salihoglu, Omer Muti, Abdullah Kutluer, Kutlu Tansel, T. Turan, Rasit Kocabas, Coskun Aydınlı, Atilla |
| Copyright Year | 2012 |
| Abstract | Taking advantage of the favorable Gibbs free energies, atomic layer deposited (ALD) aluminum oxide (Al2O3) was used as a novel approach for passivation of type II InAs/GaSb superlattice (SL) midwave infrared (MWIR) single pixel photodetectors in a self cleaning process (λcut-off ∼ 5.1 μm). Al2O3 passivated and unpassivated diodes were compared for their electrical and optical performances. For passivated diodes, the dark current density was improved by an order of magnitude at 77 K. The zero bias responsivity and detectivity was 1.33 A/W and 1.9 × 1013 Jones, respectively at 4 μm and 77 K. Quantum efficiency (QE) was determined as %41 for these detectors. This conformal passivation technique is promising for focal plane array (FPA) applications. |
| Starting Page | 074509 |
| Ending Page | 074509 |
| Page Count | 1 |
| File Format | PDF HTM / HTML |
| DOI | 10.1063/1.3702567 |
| Alternate Webpage(s) | http://repository.bilkent.edu.tr/bitstream/handle/11693/28226/bilkent-research-paper.pdf;jsessionid=A7A237A121E3E31A96F20B5BA967B40C?sequence=1 |
| Alternate Webpage(s) | http://www.fen.bilkent.edu.tr/~aydinli/wp-content/uploads/2011/06/2012-4.pdf |
| Alternate Webpage(s) | http://www.fen.bilkent.edu.tr/~kocabas/wp-content/uploads/2012/05/Omer-detector-JApplPhys_111_074509.pdf |
| Alternate Webpage(s) | https://doi.org/10.1063/1.3702567 |
| Volume Number | 111 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
