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Suppression of leakage current in Schottky barrier metal – oxide – semiconductor field-effect transistors
| Content Provider | Semantic Scholar |
|---|---|
| Author | Lübben, Holger |
| Copyright Year | 2001 |
| Abstract | In this article we investigate the subthreshold behavior of PtSi source/drain Schottky barrier metal– oxide–semiconductor field-effect transistors. We demonstrate very large on/off ratios on bulk silicon devices and show that slight process variations can result in anomalous leakage paths that degrade the subthreshold swing and complicate investigations of device scaling. © 2002 American Institute of Physics.@DOI: 10.1063/1.1425074 # |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://www.eng.yale.edu/reedlab/publications/117%20JAP02.pdf |
| Language | English |
| Access Restriction | Open |
| Subject Keyword | Diffusion barrier Extravasation Image scaling Platinum silicide Schottky barrier Semiconductor Silicon Spectral leakage Test scaling Transistor Zero suppression |
| Content Type | Text |
| Resource Type | Article |