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Gate-modulated conductance of few-layer WSe 2 field-effect transistors in the subgap regime : Schottky barrier transistor and subgap impurity states
| Content Provider | Semantic Scholar |
|---|---|
| Author | Wang, Junjie Rhodes, Daniel J. Feng, Simin Watanabe, Keiji Taniguchi, Takafumi Mallouk, Thomas E. Terrones, Mauricio Balicas, Luis |
| Copyright Year | 2015 |
| Abstract | Articles you may be interested in Evaluation of pulsed laser annealing for flexible multilayer MoS2 transistors Appl. Schottky-barrier lowering in silicon nanowire field-effect transistors prepared by metal-assisted chemical etching Appl. Measurement of low Schottky barrier heights applied to metallic source/drain metal–oxide–semiconductor field effect transistors |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://research.chem.psu.edu/mallouk/articles/1.4918282.pdf |
| Language | English |
| Access Restriction | Open |
| Subject Keyword | APPL1 gene Acceptor (semiconductors) Conductance (graph) Field effect (semiconductor) Height Modulation Molybdenum disulfide Nanowires Schottky barrier Semiconductor Silicon Simulated annealing Transistor Transistors |
| Content Type | Text |
| Resource Type | Article |