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Analysis of 3D NAND technologies and comparison between charge-trap-based and floating-gate-based flash devices
| Content Provider | Semantic Scholar |
|---|---|
| Author | Shi-Jun, Liu Xue-Cheng, Zou |
| Copyright Year | 2017 |
| Abstract | Abstract NAND flash chips have been innovated from two-dimension (2D) design which is based on planar NAND cells to three-dimension (3D) design which is based on vertical NAND cells. Two types of NAND flash technologies–charge-trap (CT) and floating-gate (FG) are presented in this paper to introduce NAND flash designs in detail. The physical characteristics of CT-based and FG-based 3D NAND flashes are analyzed. Moreover, the advantages and disadvantages of these two technologies in architecture, manufacture, interference and reliability are studied and compared. |
| Starting Page | 75 |
| Ending Page | 96 |
| Page Count | 22 |
| File Format | PDF HTM / HTML |
| DOI | 10.1016/S1005-8885(17)60214-0 |
| Volume Number | 24 |
| Alternate Webpage(s) | http://jcupt.bupt.edu.cn/fileup/PDF/2017wz-027.pdf |
| Alternate Webpage(s) | https://doi.org/10.1016/S1005-8885%2817%2960214-0 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
