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InAs/GaAs quantum dot 1.3 um DFB laser heterogeneously integrated on a silicon waveguide circuit
| Content Provider | Semantic Scholar |
|---|---|
| Author | Uvin, Sarah Kumari, Sulakshna Groote, Andreas De Verstuyft, Steven Morthier, Geert Thourhout, Dries Van Roelkens, Gunther |
| Copyright Year | 2018 |
| Abstract | We demonstrate the first single mode InAs/GaAs quantum dot distributed feedback laser at 1.3 μm wavelength heterogeneously integrated on a Si photonics waveguide circuit. High temperature operation with continuous wave lasing up to 100◦C is shown. Threshold current densities as low as 353 A/cm were measured. Single mode lasing around 1320 nm with a side-mode suppression ratio of 40 dB is obtained. These devices are attractive candidates for uncooled wavelength division multiplexing (WDM) transceivers in data centers. |
| Starting Page | 125 |
| Ending Page | 127 |
| Page Count | 3 |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://www.ecio-conference.org/wp-content/uploads/2018/07/103-Th.2.A.3-103-Highly-Rated-Paper-InAs-GaAs-quantum-dot-1.3-um-DFB-laser-heterogeneously-integrated-on-a-silicon-waveguide-circuit.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |