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Giant tunneling magnetoresistance in fully epitaxial Co 2 (Mn,Fe)Si/MgO/Co 2 (Mn,Fe)Si magnetic tunnel junctions
| Content Provider | Semantic Scholar |
|---|---|
| Author | Kawami, Takeshi |
| Copyright Year | 2013 |
| Abstract | Previously, we have shown that harmful defects in Heusler alloy thin films of Co2MnSi (CMS) and Co2MnGe can be suppressed by appropriately controlling the film composition, i.e., CoMn antisites detrimental to the half-metallicity can be suppressed by a Mn-rich composition. 1 As a result, we have recently demonstrated high TMR ratios of up to 1995% at 4.2 K and up to 354% at 290 K for fully epitaxial CoFe-buffered CMS/MgO/CMS MTJs (CMS MTJs) having Mn-rich CMS electrodes. 2 Half-metallic Heusler alloys feature a lot of variety of materials, including quaternary alloys. The purpose of the present study was to clarify how the substitution of Fe for Mn in CMS changes the half-metallicity by investigating the spin-dependent tunneling characteristics of epitaxial MTJs having (Mn+Fe)-rich Co2(Mn,Fe)Si (CMFS) electrodes and a MgO barrier. The quaternary CMFS system has been applied to GMR devices, 3,4 demonstrating a high device performance, and AlOx-barrier MTJs. 6 |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://confit.atlas.jp/guide/event-img/jsap2013a/18a-C15-4/public/pdf?type=in |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
