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Bias Voltage Dependence of the Spin-dependent Tunneling Conductance of Co 2 (Mn,Fe)Si-Based Magnetic Tunnel Junctions Exhibiting Giant Tunneling Magnetoresistances
| Content Provider | Semantic Scholar |
|---|---|
| Author | Moges, Kidist Hu, Biao Uemura, Tetsuya Yamamoto, Masanori |
| Copyright Year | 2015 |
| Abstract | We systematically investigated the dI/dV versus V characteristics (= G spectra) for the antiparallel magnetization alignment (AP) of magnetic tunnel junctions (MTJs) having Co2(Mn,Fe)Si electrodes that showed giant tunneling magnetoresistance (TMR) ratios. The degree of the half-metallicity of Co2(Mn,Fe)Si electrodes was varied by varying their film compositions. Clear dip structures were found in the G spectra for AP in a small bias region of up to ±70 mV. We found that the dI/dV value for AP at a characteristic voltage, Vs = ±70 mV, normalized by the value at V = 0 increased linearly with the TMR ratio at 4.2 K. This behavior was explained by spin-flip tunneling via magnon excited by hot |
| File Format | PDF HTM / HTML |
| DOI | 10.7567/ssdm.2015.ps-12-5 |
| Alternate Webpage(s) | https://confit.atlas.jp/guide/event-img/ssdm2015/PS-12-5/public/pdf_archive?type=in |
| Alternate Webpage(s) | https://doi.org/10.7567/ssdm.2015.ps-12-5 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
