NDLI: Growth of SiGe/Si quantum well structures by atmospheric pressure chemical vapor deposition

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Growth of SiGe/Si quantum well structures by atmospheric pressure chemical vapor deposition

Content Provider	Semantic Scholar
Author	Gruetzmacher, Detlev A. Sedgwick, Thomas O. Zaslavsky, Alexander I. Powell, Adrian R. Kiehl, Richard A. Ziegler, W. Cotte, J.
Copyright Year	1993
Abstract	First structural and electrical data are reported for SiGe/Si quantum well structures grown by a new ultra clean low temperature epitaxial deposition process at atmospheric pressure. It is found that the process suppresses the segregation of germanium, possibly by a chemical termination of the surface during the growth. Mutiple-quantum-well structures with controllable well widths and abrupt interfaces have been prepared at temperatures ranging from 550 to 650°C. Magneto-transport measurements of modulation doped quantum wells reveal hole mobilities of 2000 cm2/Vs at 4.2 K at a carrier density of 1.7*1012 cm−2 and a germanium concentration of 18% in the SiGe channel. Resonant tunneling diodes grown by this technique exhibit well resolved regions of negative differential resistance within a very symmetric I-V characteristic.
Starting Page	303
Ending Page	308
Page Count	6
File Format	PDF HTM / HTML
DOI	10.1007/BF02661381
Alternate Webpage(s)	https://www.brown.edu/research/labs/zaslavsky/sites/zaslavsky/files/1993JEMv22p303.pdf
Alternate Webpage(s)	https://doi.org/10.1007/BF02661381
Volume Number	22
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article

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