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Investigation of microcrystalline silicon emitters and DC sputtered ZnO:Al as front contact in silicon heterojunction solar cells
| Content Provider | Semantic Scholar |
|---|---|
| Author | Ghahfarokhi, Omid Madani |
| Copyright Year | 2014 |
| Abstract | Silicon heterjunction (SHJ) solar cells consisting of silicon thin film layers and crystalline silicon has the advantage of high open circuit voltage and hence higher efficiency compared to the traditional diffused solar cells. This structure needs transparent conductive oxide (TCO) for carriers transport to the metal grid. The main focus of this work is to investigate microcrystalline silicon (µc-Si:H) films as a novel emitter layer in combination with DC sputtered aluminum doped zinc oxide (ZnO:Al) as an alternative TCO for SHJ solar cells. The effect of ZnO:Al deposition parameters on the electrical properties of fabricated SHJ solar cells and an optimum deposition window for each process parameter to satisfy the TCO requirements were investigated. Moreover, several advantages of µc-Si:H emitter used to suppress the Schottky barrier at ZnO:Al/emitter interface such as improved passivation at emitter/c-Si interface and reduced emitter parasitic absorption were addressed. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://oops.uni-oldenburg.de/1847/1/madinv14.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
