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ITO-Free Silicon Heterojunction Solar Cells With ZnO:Al/SiO2 Front Electrodes Reaching a Conversion Efficiency of 23%
| Content Provider | Semantic Scholar |
|---|---|
| Author | Morales-Vilches, Anna B. Cruz, Alexandros Pingel, Sebastian Neubert, Sebastian Mazzarella, Luana Meza, Daniel Korte, Lars Schlatmann, Rutger Stannowski, Bernd |
| Copyright Year | 2019 |
| Abstract | Silicon heterojunction (SHJ) solar cells have been increasingly attracting attention to the photovoltaic community in the last years due to their high efficiency potential and the lean production process. We report on the development of a stable baseline process for SHJ cells with focus on the optical improvement of the solar cells’ front side. An amorphous silicon oxide layer (a-SiO2) was used as an antireflective coating (AR) on the front side the finished SHJ devices. Both optical simulations and experimental results demonstrate a short-circuit current density (Jsc) improvement of 0.4 mA/cm2 when applying the a-SiO2 AR, yielding maximum conversion efficiencies of 23.0%. Full-size cells with 244 cm2 total area have been produced using three front contact stacks: indium tin oxide (ITO) as reference, ZnO:Al, and ZnO:Al/SiO2 showing the Jsc improvement with the double AR configuration. Damp-heat tests on those samples demonstrate an enhanced stability of cells with ZnO:Al front TCO when capped with SiO2. |
| Starting Page | 34 |
| Ending Page | 39 |
| Page Count | 6 |
| File Format | PDF HTM / HTML |
| DOI | 10.1109/JPHOTOV.2018.2873307 |
| Alternate Webpage(s) | https://www.helmholtz-berlin.de/pubbin/oai_publication?ID=98072&VT=1 |
| Alternate Webpage(s) | https://doi.org/10.1109/JPHOTOV.2018.2873307 |
| Volume Number | 9 |
| Journal | IEEE Journal of Photovoltaics |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
