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Semconductor Structure Having a Silicon Oxyntride Arc Layer and a Method of Forming the Same Background of the Invention
| Content Provider | Semantic Scholar |
|---|---|
| Copyright Year | 2017 |
| Abstract | (76) Inventors: Hartmut Ruelke, Dresden (DE), (51) Int. Cl." . H01L 21/00 Martin Mazur, Pulsnitz (DE); Minh (52) U.S. Cl. . 438/29 Van Ngo, Fremont, CA (US) (57) ABSTRACT Correspondence Address: Williams, Morgan & Amerson, P.C. A Semiconductor Structure is disclosed having a Silicon Suite 250 oxynitride ARC layer formed over a material layer to be 7676 Hillmont patterned, wherein the ARC layer comprises a protection Houston, TX 77040 (US) layer that prevents contact of the photoresist with nitrogen atoms. The ARC layer is formed by plasma-enhanced (21) Appl. No.: 09/851,899 chemical vapor deposition So that the optical properties of the ARC layer, Such as thickness, refractive indeX and (22) Filed: May 9, 2001 extinction coefficient, can be precisely controlled. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://patentimages.storage.googleapis.com/a2/0d/39/ebd3c4fc90f5e5/US20020076843A1.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
