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Method for Producing a Semconductor Device Having a Semconductor Layer of Sc Technical Field of the Invention and Prior Art
| Content Provider | Semantic Scholar |
|---|---|
| Author | Niebling, John Examiner, A. S. Sistant Lebentritt, Michael S. |
| Copyright Year | 2017 |
| Abstract | A method for producing a Semiconductor device, having a Semiconductor layer of a SiC comprises the steps of a) Supplying dopants to the Surface of the SiC layer during heating thereof for diffusion of the dopants into the SiC layer, and b) highly doping at least a portion of the Surface layer of the SiC layer prior to step a) to control diffusion of the dopants into the SiC layer under the surface layer portion. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://patentimages.storage.googleapis.com/3c/09/3d/ce140449ef6aef/US5804482.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
