Loading...
Please wait, while we are loading the content...
Similar Documents
METHOD FOR FORMING POLYCRYSTAL SILICON FILM FOR SEMCONDUCTOR ELEMENTS BACKGROUND OF THE INVENTION 1. Field of the Invention
| Content Provider | Semantic Scholar |
|---|---|
| Author | Dang, Phuc Toan |
| Copyright Year | 2017 |
| Abstract | A rough Surface made of a doped polycrystal Silicon film is formed on an amorphous Silicon film disposed on a Semi conductor Substrate, by a method including the steps of: (a) activating dangling bonds present on a Surface of an amor phous Silicon film; (b) forming an amorphous Silicon polysilicon mixed-phase layer on the Surface of the amor phous Silicon film by contacting the dangling bonds with a gas containing Silane gas and dopant gas while controlling the ratio of dopant gas to Silane gas to bind Silicon atoms and dopant atoms to the dangling bonds; and (c) annealing the amorphous Silicon-polysilicon mixed-phase layer to form polysilicon grains therefrom, thereby forming a rough Sur face made of doped polysilicon film. Doping can be con ducted after formation of the polysilicon grains. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://patentimages.storage.googleapis.com/42/8f/0d/082e33cc06891a/US6211077.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
