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Effects of underlying films on the chemical-mechanical polishing for shallow trench isolation technology
| Content Provider | Semantic Scholar |
|---|---|
| Author | Wang, Yu-Wu Liu, Chi-Wen Feng, M. S. Dun, Jowei Chou, Ken-Shen |
| Copyright Year | 1997 |
| Abstract | The effects of underlying films on the chemical-mechanical polishing (CMP) removal rate have been studied and characterized. A model for the underlying film mechanical properties such as hardness and Young’s modulus, relating to the polishing removal rate was proposed. In addition, a modified shallow trench isolation (STI) process with a thin nitride overcoat has been suggested to eliminate the dishing and oxide remaining on nitride issues. Furthermore, in order to minimize the residual particles and metallic contamination, a modified multichemical spray-cleaning process provided for the post-STI CMP cleaning was also studied. © 1997 Elsevier Science S.A. |
| Starting Page | 543 |
| Ending Page | 549 |
| Page Count | 7 |
| File Format | PDF HTM / HTML |
| DOI | 10.1016/S0040-6090(97)00490-2 |
| Volume Number | 308 |
| Alternate Webpage(s) | https://ir.nctu.edu.tw/bitstream/11536/239/1/000071553400100.pdf |
| Alternate Webpage(s) | https://doi.org/10.1016/S0040-6090%2897%2900490-2 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |