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Modeling of chemical mechanical polishing for shallow trench isolation (2002)
| Content Provider | CiteSeerX |
|---|---|
| Researcher | Lee, Brian Idstitute, Sachusemts Boning, Duane S. |
| Description | Chemical mechanical polishing (CMP) is a key process enabling shallow trench isolation (STI), which is used in current integrated circuit manufacturing processes to achieve device isolation. Excessive dishing and erosion in STI CMP processes, however, create device yield concerns. This thesis proposes characterization and modeling techniques to address a variety of concerns in STI CMP. Three major contributions of this work are: characterization and modeling of STI CMP processes, both conventional and nonconventional; layout optimization to reduce pattern-dependent dishing and erosion; and modeling of wafer nanotopography impact on STI CMP yield. An STI CMP characterization method is combined with a chip-scale pattern-dependent model to create a methodology that enables tuning of STI CMP process models and prediction of post-CMP dishing, erosion, and clearing times on arbitrary layouts. Model extensions enable characterization of STI CMP processes that use nonconventional consumable sets, including fixed |
| File Format | |
| Language | English |
| Publisher Date | 2002-01-01 |
| Publisher Institution | University of California, Berkeley |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Thesis |
