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Semconductor Device and Method of Manufacturing Asemconductor Substrate
| Content Provider | Semantic Scholar |
|---|---|
| Copyright Year | 2017 |
| Abstract | A semiconductor substrate (1) of the present invention is made of nitrides of group III metals having wurtzite crystal structure and is grown in vapor phase either on a (0001) oriented foreign Substrate (2), lattice mismatched to the semi conductor substrate materials, or on existing (0001) oriented highly dislocated layer (3) of the semiconductor substrate materials and has a highly reduced dislocation density. According to the present invention, a structure is utilized for the dislocation density reduction, which comprises a disloca tion redirection layer (4) providing intentional inclination of threading dislocations (6) towards high index crystallo graphic planes having crystallographic indexes other than (0001) and those of the type 1100, in order to enhance the probability for dislocation reactions; and a dislocation reac tion layer (5) positioned above said dislocation layer (4), in which the threading dislocations (6) coalesce with each other resulting in reduced threading dislocation density at the semi conductor substrate surface (7). |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://patentimages.storage.googleapis.com/7c/56/7d/8d224e5498919a/US20080308841A1.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
