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Composition for Polishinga Semconductor Device and Process for Manufacturing Asemconductor Device Using the Same Technical Field
| Content Provider | Semantic Scholar |
|---|---|
| Author | Zas, R. T. V. |
| Copyright Year | 2017 |
| Abstract | (51) Int. Cl. ................................................ H01L 21/302 Correspondence Address: (52) U.S. Cl. .............................................................. 438/693 SUGHRUE, MION, ZINN, MACPEAK & SEAS, PLLC (57) ABSTRACT 2100 Pennsylvania Avenue, NW An abrasive composition for polishing a Semiconductor Washington, DC 20037-3213 (US) device, comprising cerium oxide, a water-Soluble organic compound having at least one group of -COOH, -COOM (wherein M, is an atom or a functional group (73) Assignee: SHOWADENKO K.K. capable of substituting a H atom to form a salt), -SOH or —SO.M., (wherein M, is an atom or a functional group (21) Appl. No.: 09/953,127 capable of Substituting a H atom to form a salt), and water a proceSS for forming shallow trench isolations using this (22) Filed: Sep. 17, 2001 abrasive composition. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://patentimages.storage.googleapis.com/e1/28/59/55aa863b47d4ae/US20020045350A1.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
