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Characterization of thick graded Si1−xGex/Si layers grown by low energy plasma enhanced chemical vapour deposition
| Content Provider | Semantic Scholar |
|---|---|
| Author | Seng, Hwee Leng Breese, Mark B. H. Watt, Fiona M. Kummer, Matthias Känel, Hans Von |
| Copyright Year | 2004 |
| Abstract | Thick, linearly graded-composition strained Si1� xGex/Si layers were recently developed for proton beam bending and extraction experiments. Such unrelaxed layers which are many microns thick necessitate a low maximum germanium content. Here, graded Si1� xGex epilayers, 5–20 lm thick with maximum Ge compositions of x ¼ 0:5–1.7%, grown by low energy plasma enhanced chemical vapour deposition were characterized using a recently developed mode of ion channeling analysis which is capable of quantifying the small lattice rotations along off-normal planar directions. Highquality 10 l mS i 1� xGex epilayers with bend angles along off-normal directions which agree very well with those of fully strained layers are successfully grown. |
| Starting Page | 235 |
| Ending Page | 239 |
| Page Count | 5 |
| File Format | PDF HTM / HTML |
| DOI | 10.1016/S0168-583X(03)01820-2 |
| Volume Number | 215 |
| Alternate Webpage(s) | http://www.ciba.nus.edu.sg/publications/mat/mat2004_2.pdf |
| Alternate Webpage(s) | https://doi.org/10.1016/S0168-583X%2803%2901820-2 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |