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Flexible Write-Once–Read-Many-Times Memory Device Based on a Nickel Oxide Thin Film
| Content Provider | Semantic Scholar |
|---|---|
| Author | Liu, Yang Chen, T. P. Liu, Zhixuan Yu, Yi-Qiang Lei, Huajun Fung, S. |
| Copyright Year | 2012 |
| Abstract | A write-once-read-many-times (WORM) memory device based on conduction switching of a NiO thin film in a metal-insulator-metal structure is fabricated on a flexible substrate. The device can be switched from a low-conductance state (unprogrammed state) to a high-conductance state (programmed state) with the formation of conductive filament(s) in the NiO layer. The two memory states can be easily distinguished at a very low reading voltage. For example, at the reading voltage of 0.1 V, the current ratio of the state programmed at 3 V for 1 μs to the unprogrammed state is larger than 104. The WORM device exhibits good reading-endurance and data-retention characteristics. The flexible device is promising for low-cost and low-power archival storage applications. |
| Starting Page | 858 |
| Ending Page | 862 |
| Page Count | 5 |
| File Format | PDF HTM / HTML |
| DOI | 10.1109/TED.2011.2179939 |
| Volume Number | 59 |
| Alternate Webpage(s) | http://hub.hku.hk/bitstream/10722/146405/1/Content.pdf |
| Alternate Webpage(s) | https://doi.org/10.1109/TED.2011.2179939 |
| Journal | IEEE Transactions on Electron Devices |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
