Write-Once–Read-Many-Times Memory Based on ZnO on p-Si for Long-Time Archival Storage

Content Provider	Semantic Scholar
Author	Qi, Jing Jing Zhang, Qing Huang, Jian Ren, Jingjian Olmedo, Mario Liu, Jianlin
Copyright Year	2011
Abstract	Write-once-read-many-times memory cells were fabricated using ZnO thin film on p-Si (111) substrate. The off- and on-state resistance ratio is over 104 and can be well sustained for more than 100 years and perfectly endure reading cycles of 108 . The conducting filaments consisting of oxygen vacancies are responsible for the switching mechanism.
Starting Page	1445
Ending Page	1447
Page Count	3
File Format	PDF HTM / HTML
DOI	10.1109/LED.2011.2162219
Volume Number	32
Alternate Webpage(s)	http://qsl.ece.ucr.edu/Publications/Journals/jno136.pdf
Journal	IEEE Electron Device Letters
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article