Two-Terminal Nonvolatile Write-Once-Read-Many-Times Memory Based on All-Inorganic Halide Perovskite.

Content Provider	Europe PMC
Author	Yu, Zhipeng Zhao, Xiaofeng Ai, Chunpeng Fang, Xin Zhao, Xiaohan Wang, Yanchao Zhang, Hongquan
Editor	Lu, Qingyou
Copyright Year	2022
Abstract	Write-once-read-many-times (WORM) memory belonging to an important non-volatile memory type achieves the read-only state after the write operation and is used in the fields of data security storage widely. WORM memory has been developed based on a variety of materials. In recent years, halide perovskites have become the research hotspot material for this memory due to its excellent properties. Here, the all-inorganic CsPbBr3 perovskite thin film was prepared on a FTO substrate by using a two-step method. The prepared CsPbBr3 thin films have the characteristics of densely packed crystal grains and smooth surface. The device, having the FTO/CsPbBr3/Al sandwich structure by evaporating the Al electrode onto the CsPbBr3 thin film, represents the typical WORM behavior, with long data retention time (104 s), a low operation voltage (2.1 V) and a low reading voltage (0.1 V). Additionally, the resistance transition mechanism of the resulting WORM devices was analyzed.
Journal	Micromachines (Basel)
Volume Number	14
PubMed Central reference number	PMC9863792
Issue Number	1
PubMed reference number	36677154
e-ISSN	2072666X
DOI	10.3390/mi14010093
Language	English
Publisher	MDPI
Publisher Date	2022-12-29
Access Restriction	Open
Rights License	Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). © 2022 by the authors.
Subject Keyword	write-once-read-many-times (WORM) memory all-inorganic halide perovskite
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering Control and Systems Engineering Mechanical Engineering