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APPARATUS FOR FORMING THIN FILM ON SEMCONDUCTOR SUBSTRATE BY PLASMA REACTION BACKGROUND OF THE INVENTION 1. Field of the Invention
| Content Provider | Semantic Scholar |
|---|---|
| Author | Nguyen, Dao Hinh |
| Copyright Year | 2017 |
| Abstract | US 2002/0168870 A1 Nov. 14, 2002 A plasma CVD apparatus for forming a thin film on a (51) Int. Cl." .............................................. H01L 21/469 Semiconductor Substrate by plasma reaction includes: (i) a (52) U.S. Cl. ....................... 438/778; 438/488: 438/491; reaction chamber; (ii) a reaction gas inlet for introducing a 438/611 reaction gas into the reaction chamber; (iii) a lower stage on (58) Field of Search 438/488, 491 which a Semiconductor Substrate is placed in the reaction |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://patentimages.storage.googleapis.com/c4/ac/c0/ef83fe1789fbc9/US6602800.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |