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Structural Properties of Inn on Gan Grown by Metalorganic Vapor-phase Epitaxy
| Content Provider | Semantic Scholar |
|---|---|
| Author | Yamaguchi, Shigeo Kariya, Michihiko Nitta, Shugo Takeuchi, Tetsuya Wetzel, Christian Amano, Hiroshi Akasaki, Isamu |
| Copyright Year | 1999 |
| Abstract | InN has been expected to be a suitable material for electronic devices such as high mobility transistors because of its small effective mass compared to other nitrides. Heteroepitaxial InN films were grown by metalorganic vapor-phase epitaxy. The films have been structurally characterized by triple-axis x-ray diffraction (XRD) analysis in terms of lattice-mismatch dependence and InN film thickness dependence, and Hall measurements have been performed. In the XRD measurement, ω and ω–2θ scans were used, and the degree of tilting (the linewidth of x-ray signal, Δωc) [(0002) reflection] and that of twisting (Δωa) [(1010) reflection] have been separated. In addition, the degree of distribution of lattice constant c (Δ2θc) [(0002) reflection] of InN films has been assessed. For study of the lattice-mismatch dependence, growth of InN films on GaN, AlN and directly on sapphire substrates was performed, and accordingly, Δωc was found to range from about 500 to 4000 arcsec, and Δ2θc from about 400 to 700 arcsec. ... |
| Starting Page | 7682 |
| Ending Page | 7688 |
| Page Count | 7 |
| File Format | PDF HTM / HTML |
| DOI | 10.1063/1.370571 |
| Alternate Webpage(s) | http://homepages.rpi.edu/~wetzel/Preprints/JAPYamaguchiInNstructuralJ.Appl.Phys.85(11),7682-8,(1999).pdf |
| Alternate Webpage(s) | https://doi.org/10.1063/1.370571 |
| Volume Number | 85 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
